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| SKKT 26, SKKH 26 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK(R) 1 Thyristor / Diode Modules SKKT 26 SKKH 26 Symbol Conditions Values Units Features Typical Applications 1) SKKT SKKH 1 13-10-2004 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 13-10-2004 NOS (c) by SEMIKRON SKKT 26, SKKH 26 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 13-10-2004 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 13-10-2004 NOS (c) by SEMIKRON |
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